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NTMS4872N
TYPICAL PERFORMANCE CURVES
1500
1200
C iss
T J = 25 ° C
V GS = 0 V
10
8
QT
V GS
900
6
600
4
Q GS
Q GD
C oss
300
0
0
C rss
5 10
15
20
25
30
2
0
0
2
4
6
8
10
12
14
I D = 10.2 A
T J = 25 ° C
16 18
20
1000
DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
5
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage vs. Total Charge
100
V DD = 15 V
I D = 10.2 A
V GS = 10 V
t d(off)
t f
t r
4
3
V GS = 0 V
T J = 25 ° C
10
t d(on)
2
1
1
1
10
100
0
0
0.2
0.4
0.6
0.8
1.0
100
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10 m s
25
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I D = 7 A
10
100 m s
1 ms
20
15
1
V GS = 20 V
SINGLE PULSE
10 ms
10
0.1
T C = 25 ° C
R DS(on) LIMIT
dc
5
THERMAL LIMIT
0.01
0.1
PACKAGE LIMIT
1
10
100
0
25
50 75 100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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